Please use this identifier to cite or link to this item: https://hdl.handle.net/10316/114675
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dc.contributor.authorAlberto, H. V.-
dc.contributor.authorVilão, R. C.-
dc.contributor.authorRibeiro, E. F. M.-
dc.contributor.authorGil, J. M.-
dc.contributor.authorCurado, M. A.-
dc.contributor.authorTeixeira, J. P.-
dc.contributor.authorFernandes, P. A.-
dc.contributor.authorCunha, J. M. V.-
dc.contributor.authorSalomé, P. M. P.-
dc.contributor.authorEdoff, M.-
dc.contributor.authorMartins, M. I.-
dc.contributor.authorProkscha, T.-
dc.contributor.authorSalman, Z.-
dc.contributor.authorWeidinger, A.-
dc.date.accessioned2024-04-04T12:03:02Z-
dc.date.available2024-04-04T12:03:02Z-
dc.date.issued2023-
dc.identifier.issn1742-6588-
dc.identifier.issn1742-6596-
dc.identifier.urihttps://hdl.handle.net/10316/114675-
dc.description.abstractThe slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identi ed and the passivation of the defects by bu er layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor e ect. In the present contribution, speci c aspects of the low-energy muon technique in connection with this research are discussed.pt
dc.description.sponsorshipThis work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and by national funds from FCT - Fundação para a Ciência e Tecnologia, I. P. (Portugal) under projects PTDC/FIS-MAC/29696/2017, PD/BD/142780/2018, UID/04564/2020, UID/04730/2020, UID/50025/2020.pt
dc.language.isoengpt
dc.publisherInstitute of Physicspt
dc.relationUID/50025/2020pt
dc.relationPTDC/FIS-MAC/29696/2017pt
dc.relationPD/BD/142780/2018pt
dc.relationUID/04564/2020pt
dc.relationUID/04730/2020pt
dc.rightsopenAccesspt
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/pt
dc.titleLow energy muon study of the p-n interface in chalcopyrite solar cellspt
dc.typearticlept
degois.publication.firstPage012047pt
degois.publication.issue1pt
degois.publication.titleJournal of Physics: Conference Seriespt
dc.peerreviewedyespt
dc.identifier.doi10.1088/1742-6596/2462/1/012047-
degois.publication.volume2462pt
dc.date.embargo2023-01-01*
uc.date.periodoEmbargo0pt
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextCom Texto completo-
item.openairetypearticle-
item.cerifentitytypePublications-
item.languageiso639-1en-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.orcid0000-0002-0139-1993-
crisitem.author.orcid0000-0003-2750-8923-
crisitem.author.orcid0000-0002-5953-8249-
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais
I&D CFis - Artigos em Revistas Internacionais
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